PART |
Description |
Maker |
S29PL-N07 S29PL127N65GFW000 S29PL129N65GFW000 S29P |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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SPANSION
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IS62LV1216BLL |
128 K x 16 Low Voltage, Ultra Low Power CMOS SRAM(128 K x 16 低压,极低功耗CMOS静态RAM)
|
Integrated Silicon Solution, Inc.
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K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位)的CMOS NAND型E2PROM (TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
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Toshiba Semiconductor Toshiba, Corp.
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AM29LV001BB-45RFI AM29LV001BB-45RFIB AM29LV001BB-4 |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1兆位28亩8位)的CMOS 3.0伏,只引导扇区闪 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 8 FLASH 3V PROM, 55 ns, PDSO32 64KX16,TSOP(II)44,IND,SRAM
|
http:// Advanced Micro Devices, Inc.
|
AM29LV200B AM29LV200BB-120EC AM29LV200BB-120ECB AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存
|
http:// AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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MCSOF MCSOF_TBE MCSOF_A MCSOF/A MCSOF/TBE MCSOF/AE |
CRYSTAL OSCILLATOR, CLOCK, 72 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 49.152 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 40.6 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 125 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 132.7104 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 100 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 144 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 64 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 160 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 40 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 48 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 44.2368 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 110.592 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 102.4 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 128 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 117.946 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 150 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 104 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 108 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 131.072 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 40.96 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 50.75 MHz, CMOS OUTPUT CRYSTAL OSCILLATOR, CLOCK, 60.9 MHz, CMOS OUTPUT 5V CMOS Oscillator Low Jitter
|
Golledge Electronics, Ltd. GOLLEDGE[Golledge Electronics Ltd]
|
CAT24C128HU4IGT3 CAT24C128HU4EGT3 CAT24C128LE-G |
128 kb I2C CMOS Serial
|
ON Semiconductor
|
AM29LV200BB-70DFC AM29LV200BB-70DWI AM29LV200BB-90 |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 70 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 90 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 60 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56x 8-Bit/128x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 120 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位)3.0伏的CMOS只,引导扇区快闪记忆体,修编模具1
|
Advanced Micro Devices, Inc.
|
S29WS256N0LBAI010 S29WS256N0PBFI013 S29WS064N0LBAW |
Replaced by PTB78520W : 16M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 Replaced by PTB48510C : 16M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 3.3Vout 30W 48V-Input Isolated DC-DC Converter 19-SIP MODULE -40 to 85 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 Replaced by PTB48560A : 25-WATT TRIPLE OUTPUT 48V-INPUT ISOLATED DC/DC CONVERTER FOR DSL 20-SIP MODULE 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA80 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪 Replaced by PTB48560C : 9V 30 Watt 48V-Input Isolated DC/DC Converter 19-SIP MODULE 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 LED SMT_ULED4 MICROLED RED/GREEN FOR USE WITH OPTOPIPE
|
Spansion, Inc. Spansion Inc.
|
CAT24C128YE-GT3 CAT24C128YE-T3 CAT24C128YI-T3 CAT2 |
128 kb I2C CMOS Serial EEPROM
|
ON Semiconductor
|
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